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| 3 mm (T1) LED, Non Diffused LS 3340, LO 3340, LY 3340 LG 3330, LP 3340 Besondere Merkmale q q q q q q eingefarbtes, klares Gehause zur Einkopplung in Lichtleiter als optischer Indikator einsetzbar Lotspiee mit Aufsetzebene gegurtet lieferbar Storimpulsfest nach DIN 40839 VEX06710 Features q q q q q q colored, clear package optical coupling into light pipes for use as optical indicator solder leads with stand-off available taped on reel load dump resistant acc. to DIN 40839 Semiconductor Group 1 11.96 LS 3340, LO 3340, LY 3340 LG 3330, LP 3340 Typ Type Emissionsfarbe Color of Emission Gehausefarbe Color of Package Lichtstarke Luminous Intensity IF = 10 mA IV (mcd) 6.3 ... 10.0 ... 16.0 ... 25.0 ... 10.0 ... 6.3 ... 10.0 ... 16.0 ... 25.0 ... 10.0 ... 4.0 ... 10.0 ... 16.0 ... 25.0 ... 10.0 ... 6.3 ... 10.0 ... 16.0 ... 25.0 ... 10.0 ... 4.0 ... 6.3 ... 10.0 ... 6.3 ... 50.0 20.0 32.0 50.0 80.0 50.0 20.0 32.0 50.0 80.0 32.0 20.0 32.0 50.0 80.0 50.0 20.0 32.0 50.0 80.0 20.0 12.5 20.0 32.0 Bestellnummer Ordering Code LS 3340-KN LS 3340-L LS 3340-M LS 3340-N LS 3340-LP LO 3340-KN LO 3340-L LO 3340-M LO 3340-N LO 3340-LP LY 3340-JM LY 3340-L LY 3340-M LY 3340-N LY 3340-LP LG 3330-KN LG 3330-L LG 3330-M LG 3330-N LG 3330-LP LP 3340-JL LP 3340-K LP 3340-L LP 3340-KM super-red red clear Q62703-Q1701 Q62703-Q1702 Q62703-Q1704 Q62703-Q2320 Q62703-Q3223 Q62703-Q1886 Q62703-Q2256 Q62703-Q2255 Q62703-Q2473 Q62703-Q2628 Q62703-Q1789 Q62703-Q1791 Q62703-Q1999 Q62703-Q2652 Q62703-Q1792 Q62703-Q1698 Q62703-Q1699 Q62703-Q1700 Q62703-Q2010 Q62703-Q2011 Q62703-Q2749 Q62703-Q2982 Q62703-Q2980 Q62703-Q3211 orange orange clear yellow yellow clear green colorless clear pure green green clear Streuung der Lichtstarke in einer Verpackungseinheit IV max / IV min 2.0. Luminous intensity ratio in one packaging unit IV max / IV min 2.0. Semiconductor Group 2 LS 3340, LO 3340, LY 3340 LG 3330, LP 3340 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspannung Reverse voltage Verlustleistung Power dissipation TA 25 C Warmewiderstand Thermal resistance Sperrschicht / Luft Junction / air Symbol Symbol Werte Values LS, LO, LY, LG LP C C C 30 0.5 mA A - 55 ... + 100 - 55 ... + 100 + 100 40 Einheit Unit Top Tstg Tj IF IFM VR Ptot 140 5 100 V mW Rth JA 400 K/W Semiconductor Group 3 LS 3340, LO 3340, LY 3340 LG 3330, LP 3340 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 20 mA Dominantwellenlange Dominant wavelength IF = 20 mA Spektrale Bandbreite bei 50 % Irel max Spectral bandwidth at 50 % Irel max IF = 20 mA Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % IV Durchlaspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 5 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tP = 10 s, RL = 50 Symbol Symbol LS (typ.) peak (typ.) (typ.) dom (typ.) (typ.) (typ.) 2 (typ.) VF (max.) VF (typ.) IR (max.) IR (typ.) C0 635 LO 610 Werte Values LY 586 LG 565 LP 557 nm Einheit Unit 628 605 590 570 560 nm 45 40 45 25 22 nm 50 2.0 2.6 50 2.0 2.6 50 2.0 2.6 50 2.0 2.6 50 2.0 2.6 Grad deg. V V 0.01 0.01 0.01 0.01 0.01 A 10 10 10 10 10 A 12 8 10 15 15 pF (typ.) tr (typ.) tf 300 150 300 150 300 150 450 200 450 200 ns ns Semiconductor Group 4 LS 3340, LO 3340, LY 3340 LG 3330, LP 3340 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 20 mA Relative spectral emission V () = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik Irel = f () Radiation characteristic Semiconductor Group 5 LS 3340, LO 3340, LY 3340 LG 3330, LP 3340 Durchlastrom IF = f (VF) Forward current TA = 25 C Relative Lichtstarke IV/IV(10 mA) = f (IF) Relative luminous intensity TA = 25 C Zulassige Impulsbelastbarkeit IF = f (tP) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C LS, LO, LY, LG Zulassige Impulsbelastbarkeit IF = f (tP) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C LP Semiconductor Group 6 LS 3340, LO 3340, LY 3340 LG 3330, LP 3340 Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) Wellenlange der Strahlung peak = f (TA) Wavelength at peak emission IF = 20 mA Dominantwellenlange dom = f (TA) Dominant wavelength IF = 20 mA Durchlaspannung VF = f (TA) Forward voltage IF = 10 mA Semiconductor Group 7 LS 3340, LO 3340, LY 3340 LG 3330, LP 3340 Relative Lichtstarke IV/IV(25 C) = f (TA) Relative luminous intensity IF = 10 mA Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) Kathodenkennzeichnung: Cathode mark: Kurzerer Lotspie Short solder lead Semiconductor Group 8 GEX06951 |
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